X-band and K-band low-phase-noise VCOs using SiGe BiCMOS technology
نویسندگان
چکیده
منابع مشابه
A Ku-Band Low-Phase-Noise Wide-Tuning-Range VCO in SiGe BiCMOS Technology
—In this paper, design and fabrication of a Ku-band voltage-controlled oscillator (VCO) using commercially available 0.18 μm SiGe BiCMOS technology is presented. To achieve the low phase noise, the VCO employs a gm-boosted configuration which is a combination of cross coupled VCO and balanced Colpitts VCO, and the VCO simultaneously achieves wide tuning range. The tested results show that the ...
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—A low-phase-noise, low-power Ka-band VoltageControlled Oscillator (VCO) using cross-coupled pair configuration is presented. The Ka-band VCO circuit uses 0.18 μm SiGe BiCMOS technology. The VCO has low phase noise of -114.6 dBc/Hz at 1 MHz offset from 32.12 GHz carrier frequency and can be tuned from 30.17 to 33.48 GHz. The figure of merit is -202.1 dBc/Hz. The power consumption of the VCO wi...
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A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...
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A MMIC colpitts oscillator in push-push configuration is presented using InGaP/GaAs HBTs. The output at the second harmonic enhances the frequency range while preserving the well-known advantages of the Colpitts concept. Moreover, additional features like enhanced load-pull immunity and inherent frequency divider functionality are included. The MMIC VCO reaches state-of-the-art phasenoise perfo...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 2006
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/22/1/s46